Interconnect Innovations In High Bandwidth Memory: Part 2

Interconnect Innovations In High Bandwidth Memory: Part 2

Interconnect technology in high bandwidth memory (HBM) is at a critical juncture.

According to Damon Tsai, Woo Young Han, and Tim Kryman, bump technologies are being pushed beyond their physical and performance limits.

Both technologies are evolving to address the requirements of next-generation HBM, including increased I/O density, higher bandwidth, and improved performance.

With data rates rising, the need for increased output contact pad density is needed.

To address this challenge, bump technologies are being pushed beyond their previous limits, with some memory designers achieving bump sizes below 10µm in high-volume manufacturing.

Author summary: Innovations in HBM interconnect technology.

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Semiconductor Engineering Semiconductor Engineering — 2025-10-14